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White Electronic Designs
WV3HG64M72AER-AD6
ADVANCED*
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL
FEATURES
240-pin, dual in-line memory module Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM components VCC = VCCQ = 1.8V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh Gold edge contacts Product is lead-free RoHS compliant Package option * 240 Pin DIMM * PCB - 18.29mm (0.720") Max
DESCRIPTION
The WV3HG64M72AER is a 64Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of eighteen 64Mx4 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. NOTE: Consult factory for availability of: * Vendor source control options * Industrial temperature option
OPERATING FREQUENCIES
PC2-3200 Clock Speed CL-tRCD-tRP
* Consult factory for availability
PC2-4300 266MHz 4-4-4
PC2-5300* 333MHz 5-5-5
PC2-6400* 400MHz 6-6-6
200MHz 3-3-3
March 2005 Rev. 1
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PIN CONFIGURATION
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol VREF VSS DQ0 DQ1 VSS DQS0# DQS0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS DQS1# DQS1 VSS RESET# NC VSS DQ10 DQ11 VSS DQ16 DQ17 VSS DQS2# DQS2 VSS DQ18 DQ19 VSS DQ24 DQ25 VSS DQS3# DQS3 VSS DQ26 DQ27 VSS CB0 CB1 VSS DQS8# DQS8 VSS CB2 CB3 VSS VCCQ CKE0 VCC NC Err_Out* VCCQ A11 A7 VCC A5 Pin No. 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 Symbol A4 VCCQ A2 VCC VSS VSS VCC NC/Par_In* VCC A10/AP BA0 VCCQ WE# CAS# VCCQ NC NC VCCQ VSS DQ32 DQ33 VSS DQS4# DQS4 VSS DQ34 DQ35 VSS DQ40 DQ41 VSS DQS5# DQS5 VSS DQ42 DQ43 VSS DQ48 DQ49 VSS SA2 NC(TEST)* VSS DQS6# DQS6 VSS DQ50 DQ51 VSS DQ56 DQ57 VSS DQS7# DQS7 VSS DQ58 DQ59 VSS SDA SCL Pin No. 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 Symbol VSS DQ4 DQ5 VSS DM0/DQS9 NC/DQS9# VSS DQ6 DQ7 VSS DQ12 DQ13 VSS DM1/DQS10 NC/DQS10# VSS NC NC VSS DQ14 DQ15 VSS DQ20 DQ21 VSS DM2/DQS11 NC/DQS11# VSS DQ22 DQ23 VSS DQ28 DQ29 VSS DM3/DQS12 NC/DQS12# VSS DQ30 DQ31 VSS CB4 CB5 VSS DM8/DQS17 NC/DQS17# VSS CB6 CB7 VSS VCCQ NC VCC NC NC VCCQ A12 A9 VCC A8 A6 Pin No. 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 238 239 240 Symbol VCCQ A3 A1 VCC CK0 CK0# VCC A0 VCC BA1 VCCQ RAS# S0# VCCQ ODT0 NC VCC VSS DQ36 DQ37 VSS DM4/DQS13 NC/DQS13# VSS DQ38 DQ39 VSS DQ44 DQ45 VSS DM5/DQS14 NC/DQS14# VSS DQ46 DQ47 VSS DQ52 DQ53 VSS NC NC VSS DM6/DQS15 NC/DQS15# VSS DQ54 DQ55 VSS DQ60 DQ61 VSS DM7/DQS16 NC/DQS16# VSS DQ62 DQ63 VSS VCCSPD SA0 SA1 2
WV3HG64M72AER-AD6
ADVANCED
PIN NAMES
Pin Name CK0,CK0# CKE0 CB0-CB7 RAS# CAS# WE# S0# A0-A12 BA0,BA1 ODT0 SCL SDA SA0-SA2 DQ0-DQ63 DQS0-DQS17 DQS0#-DQS17# TEST* VCC VCCQ VSS VREF VCCSPD NC RESET# Par_In* Err_Out* Function Clock Inputs, positive line Clock Enables Check Bits Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs SDRAM Bank Address On-die termination control Serial Presence Detect(SPD) Clock Input SPD Data Input/Output SPD address Data Input/Output Data strobes Data strobes complement Memory Bus Test Core and I/O Power (1.8V) I/O Power (1.8V) Ground Input/Output Reference SPD Power Spare pins, No connect Register Reset Input Parity bit for control bus Parity error found in control
* These pins are not used in this module
March 2005 Rev. 1
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WV3HG64M72AER-AD6
ADVANCED
FUNCTIONAL BLOCK DIAGRAM
VSS RS0# DQS0 DQS0# DQ0 DQ1 DQ2 DQ3 DQS1 DQS1# DQ8 DQ9 DQ10 DQ11 DQS2 DQS2# DQ16 DQ17 DQ18 DQ19 DQS3 DQS3# DQ24 DQ25 DQ26 DQ27 DQS4 DQS4# DQ32 DQ33 DQ34 DQ35 DQS5 DQS5# DQ40 DQ41 DQ42 DQ43 DQS6 DQS6# DQ48 DQ49 DQ50 DQ51 DQS7 DQS7# DQ56 DQ57 DQ58 DQ59 DQS8 DQS8# CB0 CB1 CB2 CB3 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# CB4 CB5 CB6 CB7 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ60 DQ61 DQ62 DQ63 DM8/DQS17 NC/DQS17# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ52 DQ53 DQ54 DQ55 DM7/DQS16 NC/DQS16# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ44 DQ45 DQ46 DQ47 DM6/DQS15 NC/DQS15# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ36 DQ37 DQ38 DQ39 DM5/DQS14 NC/DQS14# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ28 DQ29 DQ30 DQ31 DM4/DQS13 NC/DQS13# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ20 DQ21 DQ22 DQ23 DM3/DQS12 NC/DQS12# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ12 DQ13 DQ14 DQ15 DM2/DQS11 NC/DQS11# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ4 DQ5 DQ6 DQ7 DM1/DQS10 NC/DQS10# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM0/DQS9 NC/DQS9# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS#
Serial PD SCL WP A0 A1 A2 SDA
SA0 SA1 SA2
VCCSPD VCC/VCCQ VREF VSS
Serial PD DDR2 SDRAMs DDR2 SDRAMs DDR2 SDRAMs
S0# BA0 - BA1 A0 - A12 RAS# CAS# WE# CKE0 ODT0 RESET# PCK7 PCK7#
1:2 R E G I S T E R
RST#
CK0
RS0# : DDR2 SDRAMs RBA0 - RBA1 : DDR2 SDRAMs RA0 - RA12 : DDR2 SDRAMs RRAS# : DDR2 SDRAMs RCAS# : DDR2 SDRAMs RWE# : DDR2 SDRAMs RCKE0 : DDR2 SDRAMs RODT0 : DDR2 SDRAMs
CK0# RESET#
P L L
OE
PCK0-PCK6, PCK8, PCK9
CK : DDR2 SDRAMs CK# : DDR2 SDRAMs
PCK0#-PCK6#, PCK8#, PCK9# PCK7 CK : Register PCK7# CK# : Register
NOTE: All resistor values are 22 ohms unless otherwise specified.
March 2005 Rev. 1
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All Voltages Referenced to VSS Rating Parameter Supply Voltage Supply Voltage for DLL Supply Voltage for Output Input Reference Voltage Termination Voltage Symbol VCC VCCL VCCQ VREF VTT Min. 1.7 1.7 1.7 0.49*VCCQ VREF-0.04 Type 1.8 1.8 1.8 0.50*VCCQ VREF
WV3HG64M72AER-AD6
ADVANCED
RECOMMENDED DC OPERATING CONDITIONS
Max. 1.9 1.9 1.9 0.51*VCCQ VREF+0.04
Units V V V V V
Notes
4 4 1, 2 3
There is no specific device VCC supply voltage requirement for SSTL-1.8 compliance. However under all conditions VCCQ must be less than or equal to VCC. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF isexpected to be about 0.5 x VCCQ of the transmitting device and VREF is expected to track variations in VCCQ. 2. Peak to peak AC noise on VREF may not exceed 2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VCC, VCCQ and VCCDL tied together.
ABSOLUTE MAXIMUM RATINGS
SSTL_1.8V Symbol VCC VCCQ VCCL VIN, VOUT TSTG Parameter Voltage on VCC pin relative to VSS Voltage on VCCQ pin relative to VSS Voltage on VCCL pin relative to VSS Voltage on any pin relative to VSS Storage Temperature Rating - 1.0 V - 2.3 V - 0.5 V - 2.3 V - 0.5 V - 2.3 V - 0.5 V - 2.3 V -55 to +100 Units V V V V C Notes 5 5 5 5 5, 6
5. Stresses greater than those listed under iAbsolute Maximum Ratingsi may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
CAPACITANCE
TA = 25C, f = 1MHz, VCC = VCCQ = 1.8V Parameter Input Capacitance: CK, CK# Input Capacitance: CKE, CS# Input Capacitance: Addr. RAS#, CAS#, WE# Input/Output Capacitance: DQ, DQS, DM, DQS# Symbol CCK CI1 CI2 CIO Max 11 12 12 10 Units pF pF pF pF
March 2005 Rev. 1
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Includes DDR2 SDRAM components only Symbol IDD0 Proposed Conditions
WV3HG64M72AER-AD6
ADVANCED
DDR2 IDD SPECIFICATIONS AND CONDITIONS
534 2,420 403 2,250 Units mA
Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDAD6W Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE; Data bus inputs are FLOATING Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0mA Slow PDN Exit MRS(12) = 1mA
IDD1
2,640
2,400
mA
IDD2P
730
670
mA
IDD2Q
1,110
1,040
mA
IDD2N
1,090 1,190 600 1,840
1,060 1,130 570 1,730
mA mA mA mA
IDD3P
IDD3N
Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDAD6W Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING Self refresh current; CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for detailed timing conditions
IDAD6W
3,550
2,810
mA
IDAD6R
3,230
2,730
mA
IDD5B
3,610
3,430
mA
IDD6
740
680
mA
IDD7
5,540
5,210
mA
March 2005 Rev. 1
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AC TIMING PARAMETERS
WV3HG64M72AER-AD6
ADVANCED
0C TCASE < +85C; VCCQ = + 1.8V 0.1V, VCC = +1.8V 0.1V AC CHARACTERISTICS PARAMETER Clock cycle time Clock CK high-level width CK low-level width Half clock period DQ output access time from CK/CK# Data-out high-impedance window from CK/CK# Data-out low-impedance window from CK/CK# DQ and DM input setup time relative to DQS DQ and DM input hold time relative to DQS A DQ and DM input pulse width (for each input) Data hold skew factor DQ...DQS hold, DQS to first DQ to go nonvalid, per access DQS input high pulse width DQS input low pulse width DQS output access time from CK/CK# DQS falling edge to CK rising ... setup time DQS falling edge from CK rising ... hold time DQS...DQ skew, DQS to last DQ valid, per group, per access DQS read preamble DQS read postamble DQS write preamble DQS write postamble Write command to first DQS latching transition CL = 4 CL = 3 SYMBOL tCK (4) tCK (3) tCH tCL tHP tAC tHZ tLZ tDS tDH tDIPW tQHS tQH tDQSH tDQSL tDQSCK tDSS tDSH tDQSQ tRPRE tRPST tWPRE tWPST tDQSS 0.9 0.4 0.35 0.4 WL - 0.25 MIN 3,750 5,000 0.45 0.45 MIN (tCH, tCL) -500 tAC MIN 100 225 0.35 tHP - tQHS 0.35 0.35 -450 0.2 0.2 534 MAX 8,000 8,000 0.55 0.55 +500 tAC MAX tAC MAX MIN 5,000 5,000 0.45 0.45 MIN (tCH, tCL) -600 tAC MIN 150 275 0.35 tHP - tQHS 0.35 0.35 -500 0.2 0.2 403 MAX 8,000 8,000 0.55 0.55 +600 tAC MAX tAC MAX UNIT ps ps tCK tCK ps ps ps ps ps ps tCK ps ps tCK tCK ps tCK tCK ps tCK tCK tCK tCK tCK
Data
400
450
+450
+500
Data Strobe
300 1.1 0.6 0.6 WL + 0.25 0.9 0.4 0.35 0.4 WL - 0.25
350 1.1 0.6 0.6 WL + 0.25
Continued on next page
March 2005 Rev. 1
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WV3HG64M72AER-AD6
ADVANCED
AC TIMING PARAMETERS (cont'd)
0C TCASE < +85C; VCCQ = + 1.8V 0.1V, VCC = +1.8V 0.1V AC CHARACTERISTICS PARAMETER Address and control input pulse width for each input Address and control input setup time Address and control input hold time CAS# to CAS# command delay ACTIVE to ACTIVE (same bank) command ACTIVE bank a to ACTIVE bank b command ACTIVE to READ or WRITE delay ACTIVE to PRECHARGE command Internal READ to precharge command delay 6 Write recovery time Auto precharge write recovery + precharge time Internal WRITE to READ command delay PRECHARGE command period LOAD MODE command cycle time OCD Drive mode delay CKE low to CK,CK# uncertainty REFRESH to REFRESH command interval Average periodic refresh interval Exit self refresh to non-READ command Exit self refresh to READ command Exit self refresh timing reference ODT turn-on delay ODT turn-on ODT turn-off delay ODT turn-off ODT ODT turn-on (power-down mode) SYMBOL tIPW tIS tIH tCCD tRC tRRD tRCD tRAS tRTP tWR tDAL tWTR tRP tMRD tOIT tDELAY tRFC tREFI tXSNR tXSRD tISXR tAOND tAON tAOFD tAOF tAONPD tRFC (MIN) + 10 200 250 2 tAC (MIN) 2.5 tAC (MIN) tAC (MIN) + 2000 tAC (MIN) + 2000 3 8 2 6 - AL 2 3 534 MIN 0.6 250 375 2 55 7.5 15 40 7.5 15 tWR + tRP 7.5 15 2 0 tIS + tCK + tIH 105 MAX 403 MIN 0.6 350 475 2 55 7.5 15 40 7.5 15 tWR + tRP 10 15 2 0 tIS + tCK + tIH 105 MAX UNIT tCK ps ps tCK ns ns ns ns ns ns ns ns ns tCK ns ns ns s ns tCK ps tCK ps tCK ps ps
Command and Address
70,000
70,000
12 70,000 7.8
12 70,000 7.8
Refresh
ODT turn-off (power-down mode) ODT to power-down entry latency ODT power-down exit latency Exit active power-down to READ command, MR[bit12=0] Exit active power-down to READ command, MR[bit12=1] A Exit precharge power-down to any non-READ command. CKE minimum high/low time
tAOFPD tANPD tAXPD tXARD tXARDS tXP tCKE
2 tAC (MAX) + 1000 2.5 tAC (MAX) + 600 2 x tCK + tAC (MAX) + 1000 2.5 x tCK + tAC (MAX) + 1000
tRFC (MIN) + 10 200 350 2 tAC (MIN) 2.5 tAC (MIN) tAC (MIN) + 2000 tAC (MIN) + 2000 3 8 2 6 - AL 2 3
Self Refresh
2 tAC (MAX) + 1000 2.5 tAC (MAX) + 600 2 x tCK + tAC (MAX) + 1000 2.5 x tCK + tAC (MAX) + 1000
ps tCK tCK tCK tCK tCK tCK
March 2005 Rev. 1
Power-Down
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WV3HG64M72AER-AD6
ADVANCED
ORDERING INFORMATION FOR AD6
Part Number WV3HG64M72AER534AD6 WV3HG64M72AER403AD6 Speed 266MHz/533Mb/s 200MHz/400Mb/s CAS Latency 4 3 tRCD 4 3 tRP 4 3 Height* 18.29mm (0.72") 18.29mm (0.72")
NOTES: * RoHS product. ("G" = RoHS Compliant) * Vendor specific part numbers are used to provide memory component source control. The place holder for this is shown as a lower case "x" in the part numbers above and is to be replaced with respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) * Consult factory for availability of industrial temperature (-40C to 85C) option
PACKAGE DIMENSIONS FOR AD6
Front View
133.35 (5.25) 4.00 (0.157)
3.00 (0.118) Register
18.29 (0.720) PLL
4.00 (0.157)
4.00 (0.157) 1.50 0.10 (0.059 0.004) 5.00 (0.196)
0.80 0.002 (0.031 0.002) 1.00 (0.039)
2.50 0.20 (0.098 0.007) 1.27 0.10 0.05 .004
1.7 (0.066) MAX
Back View
63.00 (2.48) 55.00 (2.165)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)
March 2005 Rev. 1
Register
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WV3HG64M72AER-AD6
ADVANCED
PART NUMBERING GUIDE
WV 3 H G 64M 72 A E R xxx AD6 x G
WEDC MEMORY DDR 2 GOLD DEPTH BUS WIDTH x4 1.8V REGISTERED SPEED (MHz) PACKAGE 240 PIN (.72) COMPONENT VENDOR NAME (M = Micron) (S = Samsung) G = ROHS COMPLIANT
March 2005 Rev. 1
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Document Title
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL
WV3HG64M72AER-AD6
ADVANCED
Revision History Rev #
Rev 0 Rev 1
History
Created New Updates
Release Date
March 2005 March 2005
Status
Advanced Advanced
March 2005 Rev. 1
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